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Zhejiang Liujing Rectifier Co., Ltd.

High Power Thyristor, N2543zc300, Convt SCR manufacturer / supplier in China, offering N2543zc300 -N880CH30 Power Thyristor Convt SCR, High Power Thyristor 3559A 2500V for Phase Control Applications R3559zc25, T9K7450802dh 800A 4500V High Power Thyristor and so on.

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Supplier Homepage Product CONVT SCR N2543zc300 -N880CH30 Power Thyristor Convt SCR

N2543zc300 -N880CH30 Power Thyristor Convt SCR

FOB Price: US $90 / Piece
Min. Order: 1 Piece
Min. Order FOB Price
1 Piece US $90/ Piece
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Port: Shanghai, China
Production Capacity: 5000piece/Month
Payment Terms: T/T, Western Union, Paypal, Money Gram

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Basic Info
  • Model NO.: N2543ZC300
  • Material: Element Semiconductor
  • Package: SMD
  • Application: Convt SCR
  • Batch Number: 2017+
  • Warranty: 1year
  • Transport Package: as Your Required
  • Origin: China
  • Manufacturing Technology: Discrete Device
  • Type: Intrinsic Semiconductor
  • Signal Processing: Analog Digital Composite and Function
  • Model: N2543zc300
  • Brand: Liujing
  • Trademark: Liujing
  • Specification: 1.6KG
  • HS Code: 85413000
Product Description
                     N2543ZC300 -N880CH30 power thyristor CONVT  SCR
Features: 
. All Diffused Structure
. Linear Amplifying Gate Configuration                
. Blocking capabilty up to 3000 volts
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device

Blocking - Off State  
Device TypeVRRM (1)VDRM (1)VRSM (1)
N2543ZC300  3000  3000  3100
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
 
Repetitive peak reverse leakage and off state leakageIRRM / IDRM
 
 
200 mA (3)
Critical rate of voltage rise dV/dt (4)1000 V/msec

Conducting - on state
ParameterSymbolMin.Max.Typ.UnitsConditions
Average value of on-state currentIT(AV)   2543 ASinewave,180o conduction,TS=55oC
RMS value of on-state currentITRMS   4922 ANominal value
Peak one cpstcle surge
(non repetitive) current
 
ITSM
  
39000
  
A
10.0 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
I square tI2t 7.6x106 A2s 10.0 msec
Latching currentIL      400 mAVD = 24 V; RL= 12 ohms
Holding currentIH      100 mAVD = 24 V; I = 2.5 A
Peak on-state voltageVTM      1.90 VITM = 3000 A; Duty cpstcle £ 0.01%
Tj = 125 oC
Critical rate of rise of on-state
current (5, 6)
di/dt       200 A/msSwitching from VDRM £ 1000 V,
non-repetitive
Critical rate of rise of on-state
current (6)
di/dt       100 A/msSwitching from VDRM £ 1000 V
 
 
Dynamic
ParameterSymbolMin.Max.Typ.UnitsConditions
Delay timetd     3.02.5msITM = 50 A; VD = 1500 V
Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms
Turn-off time (with VR = -50 V)tq      
        
400msITM > 2000 A; di/dt = 10 A/ms;
VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;
Tj = 125 oC; Duty cpstcle ³ 0.01%
Reverse recovery currentIrr        AITM > 2000 A; di/dt = 10 A/ms;
VR ³ -50 V
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