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Zhejiang Liujing Rectifier Co., Ltd.

High Power Thyristor, R0809LC16, Invt SCR manufacturer / supplier in China, offering R0809LC16 R0809ls12 High Power Thyristor for Inverter, Russian Stud Phase Control Thyristor SCR Tb, Westcode Fast Gate Turn-off Thyristor SCR H1200NC25 and so on.

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Supplier Homepage Product INVT SCR R0809LC16 R0809ls12 High Power Thyristor for Inverter

R0809LC16 R0809ls12 High Power Thyristor for Inverter

FOB Price: US $30 / Piece
Min. Order: 1 Piece
Min. Order FOB Price
1 Piece US $30/ Piece
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Production Capacity: 5000piece/Month
Transport Package: as Your Required
Payment Terms: T/T, Western Union, Paypal, Money Gram

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Basic Info
  • Model NO.: R0809LC16
  • Material: Element Semiconductor
  • Package: SMD
  • Application: Invt SCR
  • Batch Number: 2017+
  • Warranty: 1year
  • Specification: 270g
  • HS Code: 85413000
  • Manufacturing Technology: Discrete Device
  • Type: Intrinsic Semiconductor
  • Signal Processing: Analog Digital Composite and Function
  • Model: R0809LC16
  • Brand: Liujing
  • Trademark: Liujing
  • Origin: China
Product Description
                     R0809LC16 HIGH POWER THYRISTOR FOR INVERTER 

Blocking - Off State
Device TypeVRRM (1)VDRM (1)VRSM (1)
R0809LC16160016001700
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
 
Repetitive peak reverse leakage and off state leakageIRRM / IDRM
 
 
70 mA (3)
Critical rate of voltage rise (4)dV/dt200 V/msec
Conducting - on state
ParameterSymbolMin.Max.Typ.UnitsConditions
Average value of on-state currentIT(AV) 809  Sinewave,180o conduction,Tsink=55oC
Peak one cPSTCle surge
(non repetitive) current
 
ITSM
 8000
  
 
 A
 
 
10.0 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
I square tI2t 320000 A2s10.0 msec
Latching currentIL     1000 mAVD = 24 V; RL= 12 ohms
Holding currentIH      500 mAVD = 24 V; I = 2.5 A
Peak on-state voltageVTM      2.52 VITM = 1400 A; Duty cPSTCle £ 0.01%
Tj = 125 oC
 
 
Critical rate of rise of on-state
current (5, 6)
di/dt       200 A/msSwitching from VDRM £ 1000 V,
non-repetitive
Critical rate of rise of on-state
current (6)
di/dt       100 A/msSwitching from VDRM £ 1000 V

Dynamic
ParameterSymbolMin.Max.Typ.UnitsConditions
Delay timetd     1.50.5msITM = 500 A; VD = Rated VDRM
Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms
Turn-off time (with VR = -50 V)tq 25    
 
        
 msITM = 1000 A; di/dt = 60 A/ms;
VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 33% VDRM; VG = 0;
Tj = 125 oC; Duty cPSTCle ³ 0.01%
Reverse recovery chargeQrr        mCITM = 1000 A; di/dt = 60 A/ms;
VR ³ -50 V
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