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Zhejiang Liujing Rectifier Co., Ltd.

C717dB, Thyristor, Semiconductor manufacturer / supplier in China, offering Convt SCR C717dB Power Thyristor, Russian Stud Phase Control Thyristor SCR Tb, Westcode Fast Gate Turn-off Thyristor SCR H1200NC25 and so on.

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Supplier Homepage Product CONVT SCR Convt SCR C717dB Power Thyristor

Convt SCR C717dB Power Thyristor

FOB Price: US $61 / Piece
Min. Order: 1 Piece
Min. Order FOB Price
1 Piece US $61/ Piece
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Production Capacity: 5000piece/Month
Transport Package: as Your Required
Payment Terms: T/T, Western Union, Paypal, Money Gram

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Basic Info
  • Model NO.: C717DB
  • Material: Element Semiconductor
  • Package: SMD
  • Application: Converter Thyristor
  • Batch Number: 2017+
  • Warranty: 1year
  • Specification: 460g
  • HS Code: 85411000
  • Manufacturing Technology: Discrete Device
  • Type: Intrinsic Semiconductor
  • Signal Processing: Analog Digital Composite and Function
  • Model: C717dB
  • Brand: Liujing
  • Trademark: Liujing
  • Origin: China
Product Description
                            CONVT  SCR C717DB power thyristor 
Features: 
. All Diffused Structure
. Spoke Amplifying Gate Configuration                
. Blocking capabilty up to 4200 volts
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device

Blocking - Off State  
Device TypeVRRM (1)VDRM (1)VRSM (1)
C717DB  4200  4200  4300
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
 
Repetitive peak reverse leakage and off state leakageIRRM / IDRM
 
 
75 mA (3)
Critical rate of voltage rise dV/dt (4)1000 V/msec

Conducting - on state
 
ParameterSymbolMin.Max.Typ.UnitsConditions
Average value of on-state currentIT(AV)   800 ASinewave,180o conduction,TC=70oC
Peak one cpstcle surge
(non repetitive) current
 
ITSM
    
8000
  
A
10.0 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
I square tI2t 0.31x106 A2s10.0msec
Latching currentIL     500 mAVD = 24 V; RL= 12 ohms
Holding currentIH      500 mAVD = 24 V; I = 2.5 A
Peak on-state voltageVTM      1.90 VITM = 1000 A; Tj = 125 oC
Critical rate of rise of on-state
current (5, 6)
di/dt       100 A/msSwitching from VDRM £ 1000 V,
non-repetitive
Critical rate of rise of on-state
current (6)
di/dt       50 A/msSwitching from VDRM £ 1000 V

Dynamic
ParameterSymbolMin.Max.Typ.UnitsConditions
Delay timetd     2.0 msITM = 50 A; VD = 67% VDRM
Gate pulse: VG = 30 V; RG = 10 ohms; tr = 0.1 ms; tp = 20 ms
Turn-off time (with VR = -50 V)tq      250
        
 msITM > 2000 A; di/dt = 10 A/ms;
VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 67% VDRM ;
Tj = 125 oC; Duty cpstcle ³ 0.01%
Reverse recovery currentIrr       150 AITM > 2000 A; di/dt = 10 A/ms;
VR ³ -50 V


 
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