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Zhejiang Liujing Rectifier Co., Ltd.

Dcr1004SD1919, 1550A Thyristor, 1800V Thyristor manufacturer / supplier in China, offering High Power Thyristor Dcr1004SD1919 Convt SCR, Liujing Capsule Control Thyristor SCR, Power Stud Type General Rectifier Diode and so on.

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High Power Thyristor Dcr1004SD1919 Convt SCR

FOB Price: US $45 / Piece
Min. Order: 1 Piece
Min. Order FOB Price
1 Piece US $45/ Piece
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Production Capacity: 1000pieces/Month
Transport Package: as Customer Required
Payment Terms: T/T, Western Union, Paypal, Money Gram

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Basic Info
  • Model NO.: DCR1004SD1919
  • Model: Dcr1004SD1919
  • Brand: Liujing
  • Specification: 475g
  • HS Code: 85413000
  • Application: Phase Control Applications
  • Batch Number: 2017+
  • Trademark: Liujing
  • Origin: China
Product Description
            CONVT .SCR 1550A  1800V high power thyristor  DCR1004SD1919 
Features: 
. All Diffused Structure
. Spoke Amplifying Gate Configuration                
. Blocking capabilty up to 1800 volts
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device

Blocking - Off State  
Device TypeVRRM (1)VDRM (1)VRSM (1)
DCR1004SD1919  1800  1800  1900
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
 
 
Repetitive peak reverse leakage and off state leakageIRRM / IDRM
 
 
100 mA(3)
Critical rate of voltage rise dV/dt (4)200 V/msec

Technical Data :

Conducting - on state
ParameterSymbolMin.Max.Typ.UnitsConditions
Average value of on-state currentIT(AV)   1550 ASinewave,180o conduction,TC=85oC
Peak one cpstcle surge
(non repetitive) current
 
ITSM
 30000
 
 A10.0 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
I square tI2t 4.5x106 A2s10.0 msec
Latching currentIL     500 mAVD = 24 V; RL= 12 ohms
Holding currentIH      200 mAVD = 24 V; I = 2.5 A
Peak on-state voltageVTM      1.75 VITM = 2900 A; Tj =125 oC
Critical rate of rise of on-state
current (5, 6)
di/dt       100 A/msSwitching from VDRM £ 1000 V,
non-repetitive
Critical rate of rise of on-state
current (6)
di/dt       50 A/msSwitching from VDRM £ 1000 V

Dynamic
ParameterSymbolMin.Max.Typ.UnitsConditions
Delay timetd     2.0 msITM = 50 A; VD = 67% VDRM
Gate pulse: VG = 30 V; RG = 10 ohms; tr = 0.1 ms; tp = 20 ms
Turn-off time (with VR = -50 V)tq      250
        
 msITM > 2000 A; di/dt = 10 A/ms;
VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 67% VDRM ;
Tj = 125 oC; Duty cpstcle ³ 0.01%
Reverse recovery currentIrr        AITM > 2000 A; di/dt = 10 A/ms;
VR ³ -50 V

 
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