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Zhejiang Liujing Rectifier Co., Ltd.

High Power Thyristor, R0633ys16, Invt SCR manufacturer / supplier in China, offering R0633ys16-R216CH16 High Power Thyristor, High Power Thyristor 3559A 2500V for Phase Control Applications R3559zc25, T9K7450802dh 800A 4500V High Power Thyristor and so on.

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Supplier Homepage Product INVT SCR R0633ys16-R216CH16 High Power Thyristor

R0633ys16-R216CH16 High Power Thyristor

FOB Price: US $25 / Piece
Min. Order: 1 Piece
Min. Order FOB Price
1 Piece US $25/ Piece
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Port: Shanghai, China
Production Capacity: 5000piece/Month
Payment Terms: T/T, Western Union, Paypal, Money Gram

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Basic Info
  • Model NO.: R0633YS16
  • Material: Element Semiconductor
  • Package: SMD
  • Application: Invt SCR
  • Batch Number: 2017+
  • Warranty: 1year
  • Transport Package: as Your Required
  • Origin: China
  • Manufacturing Technology: Discrete Device
  • Type: Intrinsic Semiconductor
  • Signal Processing: Analog Digital Composite and Function
  • Model: R0633ys16
  • Brand: Liujing
  • Trademark: Liujing
  • Specification: 70G
  • HS Code: 85413000
Product Description
                     R0633YS16-R216CH16  high power thyristor

Blocking - Off State  
Device TypeVRRM (1)VDRM (1)VRSM (1)
R0633YS16  1600  1600  1700
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
 
Repetitive peak reverse leakage and off state leakageIRRM / IDRM
 
 
60 mA (3)
Critical rate of voltage rise dV/dt (4)200 V/msec

Conducting - on state
ParameterSymbolMin.Max.Typ.UnitsConditions
Average value of on-state currentITAV   633 ASinewave,180o conduction,Ts=55oC
Peak one cPSTCle surge
(non repetitive) current
 
ITSM
    
6900
  
A
10.0 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
I square tI2t 2.40x106 A2s10.0 msec
Latching currentIL      1000 mAVD = 24 V; RL= 12 ohms
Holding currentIH      500 mAVD = 24 V; I = 2.5 A
Peak on-state voltageVTM      1.90 VITM = 1000 A; Duty cPSTCle £ 0.01%
Tj = 125 oC
Critical rate of rise of on-state
current (5, 6)
di/dt       200 A/msSwitching from VDRM £ 1000 V,
non-repetitive
Critical rate of rise of on-state
current (6)
di/dt       100 A/msSwitching from VDRM £ 1000 V
 
 
Dynamic
ParameterSymbolMin.Max.Typ.UnitsConditions
Delay timetd     1.50.7msITM = 50 A; VD = Rated VDRM
Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms
Turn-off time (with VR = -50 V)tq20     25
        
 msITM = 550 A; di/dt = 40 A/ms;
VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;
Tj = 125 oC; Duty cPSTCle ³ 0.01%
Reverse recovery chargeQrr       *200mCITM = 550 A; di/dt = 40 A/ms;
VR ³ -50 V
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