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Zhejiang Liujing Rectifier Co., Ltd.

High Power Thyristor, N1661vc420, Convt SCR manufacturer / supplier in China, offering N1661vc420 High Power Thyristor, Three Phase Semi Control Thyristor Bridge Module Mfs, Liujing Capsule Control Thyristor SCR and so on.

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Supplier Homepage Product CONVT SCR N1661vc420 High Power Thyristor

N1661vc420 High Power Thyristor

FOB Price: US $80 / Piece
Min. Order: 1 Piece
Min. Order FOB Price
1 Piece US $80/ Piece
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Production Capacity: 5000piece/Month
Transport Package: as Your Required
Payment Terms: T/T, Western Union, Paypal, Money Gram

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Basic Info
  • Model NO.: N1661VC420
  • Material: Element Semiconductor
  • Package: SMD
  • Application: Convt SCR
  • Batch Number: 2017+
  • Warranty: 1year
  • Specification: 880g
  • HS Code: 85413000
  • Manufacturing Technology: Discrete Device
  • Type: Intrinsic Semiconductor
  • Signal Processing: Analog Digital Composite and Function
  • Model: N1661vc420
  • Brand: Liujing
  • Trademark: Liujing
  • Origin: China
Product Description
                      N1661VC420   high power thyristor

Blocking - Off State
Device TypeVRRM (1)VDRM (1)VRSM (1)
N1661VC420  4200  4200  4300
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
 
Repetitive peak reverse leakage and off state leakageIRRM / IDRM
 
 
150 mA (3)
Critical rate of voltage rise dV/dt (4)1000 V/msec
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
      50Hz/60zHz sinusoidal waveform over the
      temperature range  -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
     waveshape to 80% rated VDRM. Gate open.    Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance
      with EIA/NIMA Standard RS-397, Section
      5-2-2-6. The value defined would be in addi-
      tion to that obtained from a snubber circuit,
      comprising a 0.2 mF capacitor and 20 ohms
      resistance in parallel with the thristor under   test.
Conducting - on state
 
ParameterSymbolMin.Max.Typ.UnitsConditions
Average value of on-state currentIT(AV)   1661 ASinewave,180o conduction,TS=55oC
RMS value of on-state currentITRMS   3259 ANominal value
Peak one cpstcle surge
(non repetitive) current
 
ITSM
    
25000
  
A
10.0 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
I square tI2t 3.1x106 A2s10.0msec
Latching currentIL     500 mAVD = 24 V; RL= 12 ohms
Holding currentIH      500 mAVD = 24 V; I = 2.5 A
Peak on-state voltageVTM      2.35 VITM = 3220 A; Tj = 125 oC
Critical rate of rise of on-state
current (5, 6)
di/dt       200 A/msSwitching from VDRM £ 1000 V,
non-repetitive
Critical rate of rise of on-state
current (6)
di/dt       100 A/msSwitching from VDRM £ 1000 V
 
Dynamic
ParameterSymbolMin.Max.Typ.UnitsConditions
Delay timetd     2.0 msITM = 50 A; VD = 67% VDRM
Gate pulse: VG = 30 V; RG = 10 ohms; tr = 0.1 ms; tp = 20 ms
Turn-off time (with VR = -50 V)tq      250
        
 msITM > 2000 A; di/dt = 10 A/ms;
VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 67% VDRM ;
Tj = 125 oC; Duty cpstcle ³ 0.01%
Reverse recovery currentIrr       150 AITM > 2000 A; di/dt = 10 A/ms;
VR ³ -50 V
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