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Zhejiang Liujing Rectifier Co., Ltd.

High Power Thyristor, N1467ns260, Convt SCR manufacturer / supplier in China, offering N1467ns260 High Power Thyristor Convt SCR, Liujing Capsule Control Thyristor SCR, Power Stud Type General Rectifier Diode and so on.

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Supplier Homepage Product CONVT SCR N1467ns260 High Power Thyristor Convt SCR

N1467ns260 High Power Thyristor Convt SCR

FOB Price: US $50 / Piece
Min. Order: 1 Piece
Min. Order FOB Price
1 Piece US $50/ Piece
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Production Capacity: 5000piece/Month
Transport Package: as Your Required
Payment Terms: T/T, Western Union, Paypal, Money Gram

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Basic Info
  • Model NO.: N1467NS260
  • Material: Element Semiconductor
  • Package: SMD
  • Application: Convt SCR
  • Batch Number: 2017+
  • Warranty: 1year
  • Specification: 500g
  • HS Code: 85413000
  • Manufacturing Technology: Discrete Device
  • Type: Intrinsic Semiconductor
  • Signal Processing: Analog Digital Composite and Function
  • Model: N1467ns260
  • Brand: Liujing
  • Trademark: Liujing
  • Origin: China
Product Description
                    N1467NS260 HIGH POWER THYRISTOR  CONVT SCR
Features: 
. All Diffused Structure
. Center Amplifying Gate Configuration                  
. Blocking capabilty up to 2600 volts
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device

Blocking - Off State  
Device TypeVRRM (1)VDRM (1)VRSM (1)
N1467NS260  2600  2600  2700
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
 
 
Repetitive peak reverse leakage and off state leakageIRRM / IDRM
 
 
100 mA (3)
Critical rate of voltage rise dV/dt (4)1000 V/msec


Conducting - on state
ParameterSymbolMin.Max.Typ.UnitsConditions
Average value of on-state currentIT(AV)   1467 ASinewave,180o conduction,Tc=55oC
Peak one cPSTCle surge
(non repetitive) current
 
ITSM
 21500
   
 
 A
 
A
10.0 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
I square tI2t 2.3x106 A2s10.0 msec
Latching currentIL      800 mAVD = 24 V; RL= 12 ohms
Holding currentIH      400 mAVD = 24 V; I = 2.5 A
Peak on-state voltageVTM      1.69 VITM = 2550 A; Duty cPSTCle £ 0.01%
Tj = 125 oC
Critical rate of rise of on-state
current (5, 6)
di/dt       1000 A/msSwitching from VDRM £ 1000 V,
non-repetitive
Critical rate of rise of on-state
current (6)
di/dt       500 A/msSwitching from VDRM £ 1000 V


Dynamic
ParameterSymbolMin.Max.Typ.UnitsConditions
Delay timetd     1.50.7msITM = 50 A; VD = Rated VDRM
Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms
Turn-off time (with VR = -50 V)tq      250
        
100msITM = 1000 A; di/dt = 25 A/ms;
VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;
Tj = 125 oC; Duty cPSTCle ³ 0.01%
Reverse recovery chargeQrr       * mCITM = 1000 A; di/dt = 25 A/ms;
VR ³ -50 V
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